| PART |
Description |
Maker |
| LP6872P100-3 LP6872P100 LP6872P100-1 LP6872P100-2 |
Packaged 0.5W Power PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD4000AF |
4W PACKAGED POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| TC3889 |
5W Packaged Self-Bias PHEMT GaAs Power FETs
|
Electronic Theatre Controls, Inc.
ETC[ETC]
TRANSCOM
|
| TC3967 |
2 W Packaged Single-Bias PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC3947 |
0.5W Packaged Single-Bias PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC2571 |
1W Low-Cost Packaged PHEMT GaAs Power FETs
|
ETC[ETC]
|
| TC2696 |
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
From old datasheet system
|
TRANSCOM
ETC[ETC]
|
| TGF2021-04-SD |
DC-4 GHz Packaged Power pHEMT 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT SEMICONDUCTOR INC
|
| FPD7612P70 |
HI-FREQUENCY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| EB200P70-AJ FPD200P70 FPD200P701 |
HIGH FREQUENCY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| EB1500DFN-AJ FPD1500DFN1 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
http://
Filtronic Compound Semiconductors
|
